Chemical Vapor Deposition (CVD) Reactors

“CVD 4″ model

Main characteristics

Reactor:

●     plasmaless process, thermal synthesis (~ 800 ⁰ C);

●     synthesis of carbon nanostructures at atmospheric pressure in a stream of inert gas;

●     aerosol spray techniques of the reaction mixture in the synthesis zone;

●     manipulator system  for the synthesis acceleration and extraction of the finished sample;

●     preparing and mixing system transport (inert) and reactive gases with a high precision;

●     system for data collecting, monitoring and processing to adjust parameters optimal for the synthesis of carbon nanostructures.

Arrays of carbon nanotubes:

●     high density of CNTs;

●     high   growth rate;

●     obtaining long CNTs (> 7.5 mm) for electrochemical applications;

●     minimum dispersion  of CNT diameter;

●     modification and functionalization of  CNT graphite structure.

Automatic control system (ACS) for CVD-reactor

●       automation of process control for synthesis of carbon nanotubes;

●       monitoring the physical parameters of the CVD-reactor in real time;

●       visualization of selected parameters of the synthesis of carbon nanotubes on a on screen display;

●       possibility of increasing the input-output channels number, adapting to new versions of the CVD-reactor;

●       providing safe shutdown of the CVD-reactor in case of emergency.